Sn tuned microstructure and phase-change characteristics of GeTe nanowires
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DOI: 10.1063/5.0027144
Abstract: Sn-doped GeTe (SGT) nanowires (NWs) were investigated systematically for use in phase-change memory (PCM) applications. Composition and microstructure characterizations indicate that SGT with ∼3.0% Sn (SGT_3.0) NWs preserves the GeTe rhombohedral (R) structure, whereas SGT… read more here.
Keywords: sgt; phase change; tuned microstructure; sgt nws ... See more keywords