Formation of Highly-Activated N-Type Shallow Junction in Germanium Using Nanosecond Laser Annealing and Fluorine Co-Doping
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DOI: 10.1149/2162-8777/acd721
Abstract: By employing a 355 nm nanosecond ultraviolet laser annealing, the impact of fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in germanium (Ge) was investigated. Secondary ion mass spectrometry depth… read more here.
Keywords: laser annealing; shallow junction; formation highly; junction ... See more keywords