High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications
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DOI: 10.1016/j.mee.2016.10.002
Abstract: Abstract In this work, we explored a novel technique for the formation of ultra-shallow p+/n and n+/p junctions on Ge substrate using the spin-on dopant (SOD) followed by laser annealing (LA). The junction depth and… read more here.
Keywords: technique; ultra shallow; formation; shallow junctions ... See more keywords