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Published in 2017 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927617007978
Abstract: Non-planar semiconductor devices, such asvertical f in-based field-effect transistor (finFET) device, h ave become a viable technology for 22nm node and beyond [1-4]. However, finFET device fabrication faces new challenges and process variation control become…
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Keywords:
integration;
shallow trench;
finfet;
spectroscopy ... See more keywords
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Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.1c05118
Abstract: Compared to the established monolayer approach of two-dimensional cell cultures, three-dimensional (3D) cultures more closely resemble in vivo models; that is, the cells interact and form clusters mimicking their organization in native tissue. Therefore, the…
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Keywords:
cell;
easy fabricate;
design;
shallow trench ... See more keywords
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Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0250222
Abstract: In this Letter, a GaN-based vertical Hall device is designed and experimentally fabricated, offering an effective solution for in-plane magnetic field detection. By introducing a shallow trench structure between the excitation and sensing electrodes, the…
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Keywords:
hall;
vertical hall;
gan based;
device ... See more keywords
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Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2798295
Abstract: Two radiation hardening processes for shallow trench isolation (STI), i.e., Si+ implantation and STI oxide nitridation are investigated, including the impact on nominal electrical characteristics and radiation hardness. The total ionizing dose effects of the…
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Keywords:
radiation hardening;
process;
shallow trench;
trench isolation ... See more keywords
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Published in 2024 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2023.3326481
Abstract: We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad…
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Keywords:
sti;
charge trapping;
radiation induced;
shallow trench ... See more keywords