Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
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DOI: 10.1109/jphot.2017.2679719
Abstract: A series of samples with a different InGaN/GaN shallower-quantum well (SQW) interlayer are grown, and their effects on optical properties of InGaN/GaN multi-quantum wells and optical confinement factor of laser diodes (LDs) are investigated. It… read more here.
Keywords: quantum; ingan gan; gan shallower; shallower quantum ... See more keywords