Scalable CGeSbTe-based phase change memory devices employing U-shaped cells
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DOI: 10.1016/j.tsf.2017.04.048
Abstract: Abstract Phase change memory (PCM) that is operated on resistance changes caused by joule heating has been suggested as the next-generation memory for scaling since its programming current scales linearly. We propose a U-shaped cell… read more here.
Keywords: reset current; phase change; shaped cell; change memory ... See more keywords