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   Articles with "shaped channel" as a keyword



Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs

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recommendations! Published in 2017 at "Solid-state Electronics"

DOI: 10.1016/j.sse.2017.06.009

Abstract: Abstract Comparison of short-circuit (SC) characteristics of 500 V rated trench gate U-shaped channel (TGU) SOI-LIGBT and planar gate U-shaped channel (PGU) SOI-LIGBT is made for the first time in this paper. The on-state carrier profile… read more here.

Keywords: gate shaped; short circuit; shaped channel; structure ... See more keywords

A microfluidic rheometer for a non-Newtonian fluids based on the analysis of the recirculation angle of secondary flows in a U-shaped channel

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recommendations! Published in 2025 at "Physics of Fluids"

DOI: 10.1063/5.0300877

Abstract: The results of systematic computational and experimental studies on the flow modes of a non-Newtonian viscoplastic fluid in a U-shaped channel of a microfluidic viscometer are presented. The effect of flow rate and rheological parameters… read more here.

Keywords: rheometer; newtonian fluids; analysis; shaped channel ... See more keywords

A Novel n+ Pocket Doped L-Shaped Channel TFET for Biosensing Applications

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recommendations! Published in 2025 at "ECS Journal of Solid State Science and Technology"

DOI: 10.1149/2162-8777/adccf8

Abstract: This paper presents a novel channel-engineered Tunnel Field-Effect Transistor (TFET) featuring n+ pocket doping, specifically tailored for biosensing applications. The proposed TFET incorporates an L-shaped silicon (Si) channel with a distinctive configuration—an upright drain at… read more here.

Keywords: shaped channel; biosensing applications; pocket; tfet ... See more keywords

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

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recommendations! Published in 2023 at "Nanomaterials"

DOI: 10.3390/nano13111786

Abstract: Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical… read more here.

Keywords: shaped channel; vertical shaped; recrystallization channel; channel nanosheet ... See more keywords