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Published in 2020 at "Carbon"
DOI: 10.1016/j.carbon.2020.02.044
Abstract: Abstract This paper presents a flexible ferroelectric random access memory (FeRAM) cell with a one-transistor-one-transistor structure. The FeRAM cell was composed of a control transistor (CT) and an omega-shaped ferroelectric memory transistor (MT). An inkjet-printed…
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Keywords:
shaped ferroelectric;
ferroelectric random;
gate;
omega shaped ... See more keywords