H-terminated diamond RF MOSFETs with AlOx/SiNx bi-layer passivation and selectively etched T-shaped gates
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DOI: 10.1016/j.diamond.2020.108160
Abstract: Abstract This paper reports a novel ALD-AlOx/PECVD-SiNx bi-layer structure to passivate the surface channels of the hydrogen terminated diamond transistors. The upper SiNx was selectively etched to fabricate the robust T-shaped gates, while the lower… read more here.
Keywords: sinx layer; alox sinx; terminated diamond; shaped gates ... See more keywords