Novel photoelectrochemically combined mechanical polishing technology for scratch-free 4H-SiC surface by using CeO2-TiO2 composite photocatalysts and PS/CeO2 core/shell abrasives
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DOI: 10.1016/j.apsusc.2021.151141
Abstract: Abstract 4H-SiC is a promising next-generation semiconductor. To obtain a scratch-free SiC surface with less/no residual oxide layer at an ideal material removal rate (MRR), a novel photoelectrochemically combined mechanical polishing (PECMP) technique was proposed.… read more here.
Keywords: shell abrasives; surface; composite photocatalysts; scratch free ... See more keywords