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Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad5b15
Abstract: We report gallium nitride (GaN) vertical merged pn-Schottky (MPS) diodes with T-shaped p-GaN shielding rings (SRs). The embedded T-shaped SR features an overlapped depletion region by the lateral and vertical p–n junctions under reverse bias…
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Keywords:
shielding rings;
diodes shaped;
gan vertical;
mps diodes ... See more keywords