Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes
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DOI: 10.1063/5.0021764
Abstract: Structural differences are investigated in partial dislocations that have considerably different threshold current densities for single Shockley-type stacking fault (1SSF) expansions in PiN diodes using transmission electron microscopy and scanning transmission electron microscopy as direct… read more here.
Keywords: microscopy; structural differences; threshold current; pin diodes ... See more keywords