Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique
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DOI: 10.1016/j.jcrysgro.2017.01.004
Abstract: Abstract The expansion of double-Shockley stacking faults (DSFs) in 4H-SiC was investigated by a photoluminescence (PL) imaging technique. To observe DSFs nondestructively, heavily-nitrogen-doped epilayers were prepared to be used as specimens and the PL technique… read more here.
Keywords: heavily nitrogen; nitrogen doped; expansion; dsfs ... See more keywords