Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-019-04324-3
Abstract: In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed. In order to mitigate different short channel effects, workfunction engineering technique is applied to the gate electrode. An analytical model for… read more here.
Keywords: threshold voltage; channel potential; short channel; mode ... See more keywords
Granulation of short channel SBA-15 adsorbent and application for the removal of U(VI) by packed column
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Radioanalytical and Nuclear Chemistry"
DOI: 10.1007/s10967-018-5748-x
Abstract: In order to reduce the loss of particles during the cycling operation, a technology for the granulation of short channel SBA-15 adsorbent was developed. The adsorption behavior of obtained granules was studied under various factors… read more here.
Keywords: short channel; channel sba; packed column; granulation short ... See more keywords
Explicit Threshold Voltage Modeling Insight for Short Channel Characterization of a WFE Elliptical GAA Strained-Si MOSFET
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08503-1
Abstract: This paper presents explicit analytical modeling of a gate all around (GAA) strained silicon metal-oxide-semicondutor field-effect transistor (MOSFET) with elliptical cross section by incorporating the popular gate work function engineering (WFE) concept of lateral mole… read more here.
Keywords: voltage; short channel; threshold voltage; gate ... See more keywords
Immobilization of gold on short-channel mesoporous SBA-15 functionalized with thiol and hydrophobic groups for oxidation reactions
Sign Up to like & getrecommendations! Published in 2020 at "Catalysis Today"
DOI: 10.1016/j.cattod.2019.09.014
Abstract: Abstract Nanosized gold entities immobilized on short-channel SBA-15 mesoporous materials functionalized solely with mercaptopropyl groups and together with propyl and octyl moieties have been prepared following a two-steps procedure. These materials have been used as… read more here.
Keywords: phase; short channel; oxidation; nanosized gold ... See more keywords
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2019.107642
Abstract: Abstract In this paper we investigate the optimized design of a short channel gate-all-around-junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including the source-drain extensions, by means of genetic algorithm solutions applied to a compact current-voltage analytical model.… read more here.
Keywords: channel; channel gate; gate around; short channel ... See more keywords
Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT
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DOI: 10.1038/s41598-021-91239-7
Abstract: The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with… read more here.
Keywords: short channel; mobility; thin film; logic circuits ... See more keywords
Design study of the gate-all-around silicon nanosheet MOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab6bab
Abstract: The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures provide… read more here.
Keywords: short channel; gate; silicon nanosheet; gaa sins ... See more keywords
Universality of Short-Channel Effects on Ultrascaled MOSFET Performance
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DOI: 10.1109/led.2017.2784099
Abstract: Universality of short-channel effects on saturation current of MOSFETs has been demonstrated. The modulations of carrier injection and transmission rate have been integrated into universal functions. The proposed form has been verified by a large… read more here.
Keywords: short channel; ultrascaled mosfet; channel; universality short ... See more keywords
Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2807389
Abstract: In this letter, Gate-All-Around (GAA) nanowire (NW) p-MOSFETs with new approaches to fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first time. Few reformed fin forming processes based on conventional… read more here.
Keywords: short channel; nanowire mosfets; process; gaa nanowire ... See more keywords
A W-Band Vector Modulator Using Short-Channel Transistor Current Sources and Impedance Compensation Varactors
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2022.3171448
Abstract: A W-band vector modulator based on vector summing with a Gilbert-cell is presented, in which two kinds of error-reducing schemes are applied to the summing circuit. One is to use current sources made of short… read more here.
Keywords: vector modulator; short channel; band vector; current sources ... See more keywords
Analysis of Short-Channel Effects in Junctionless DG MOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2716969
Abstract: This brief investigates short-channel effects (SCEs) in junctionless (JL) double-gate (DG) MOSFETs analytically by solving the 2-D potential in subthreshold. ${\mathrm {I}}_{\mathsf {ds}}-{\mathrm {V}}_{\mathrm {{g}}}$ curves and ${\mathrm {V}}_{\mathrm {{t}}}$ rolloff generated from the model… read more here.
Keywords: short channel; channel effects; tex math; mathrm ... See more keywords