Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy
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DOI: 10.3390/cryst13060907
Abstract: Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate by employing a shutter-controlled process. The transition from n-type to p-type conductivity of Mg-doped GaN in relation to the… read more here.
Keywords: shutter controlled; molecular beam; plasma assisted; controlled process ... See more keywords