Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation
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DOI: 10.3938/jkps.71.717
Abstract: We fabricated fully strained Si0.77Ge0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the effect of oxidation temperatures and times. After the oxidation process, a Ge-rich layer was… read more here.
Keywords: relaxation; oxidation; dry oxidation; strain relaxation ... See more keywords