Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5023596
Abstract: We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [Lu et al., Appl.… read more here.
Keywords: undoped si0; charge; quantum dot; channel ... See more keywords
Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-016-1820-z
Abstract: In this work, Si0.8Ge0.2 is deposited onto the rib-patterned Si (1 1 10) template oriented in the [1 −1 0] direction. Atomic force microscopy (AFM) reveals that the rib sidewalls reshape into pyramid-covered (0 0… read more here.
Keywords: formation self; si0 8ge0; rib; rib patterned ... See more keywords
High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13081310
Abstract: This research presents the optimization and proposal of P- and N-type 3-stacked Si0.8Ge0.2/Si strained super-lattice FinFETs (SL FinFET) using Low-Pressure Chemical Vapor Deposition (LPCVD) epitaxy. Three device structures, Si FinFET, Si0.8Ge0.2 FinFET, and Si0.8Ge0.2/Si SL… read more here.
Keywords: super lattice; strained super; finfet; sige ... See more keywords