Articles with "si1 xgex" as a keyword



Noise behaviour of δp+ Si1−xGex layer SELBOX TFET

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Published in 2019 at "Indian Journal of Physics"

DOI: 10.1007/s12648-019-01485-9

Abstract: AbstractThis paper explores an analysis of low- and high-frequency noise in a heterojunction, selective buried oxide (SELBOX) with high-k gate dielectric TFET. The electrical parameters for different doping concentrations, δp+ layer width and mole fractions… read more here.

Keywords: spectral density; selbox; noise behaviour; si1 xgex ... See more keywords
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Pulsed laser melting of implant amorphized Si1-xGex thin films

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Published in 2021 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2021.150408

Abstract: Abstract Nanosecond pulsed laser annealing using a frequency doubled Nd:YAG laser (λ = 532 nm) was performed on undoped implant amorphized Si and 40 nm Si1-xGex epitaxial thin films ranging from x = 0.1 to 0.5. Ge+ implants were used to… read more here.

Keywords: amorphized si1; implant amorphized; thin films; si1 xgex ... See more keywords

Infrared properties of interstitial oxygen in homogeneous bulk Si1−XGeX crystals

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Published in 2021 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2021.126128

Abstract: Abstract Homogeneous concentration Si1-XGeX crystals (0.3≤X≤0.9) with 20 mm in diameter were grown using the Travelling Liquidus Zone (TLZ) method. Infrared (IR) absorption spectra of the SiGe crystals were measured at room temperature, which revealed… read more here.

Keywords: xgex crystals; interstitial oxygen; si1; si1 xgex ... See more keywords
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New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET.

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Published in 2020 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.0c16563

Abstract: We report a novel approach for engineering tensely strained Si layers on a relaxed silicon germanium on insulator (SGOI) film using a combination of condensation, annealing, and epitaxy in conditions specifically chosen from elastic simulations.… read more here.

Keywords: type mosfet; engineering; temperature; strained layers ... See more keywords
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Direct Synthesis of Alloyed Si1-xGex Nanowires for Performance-Tunable Lithium Ion Battery Anodes.

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Published in 2017 at "ACS nano"

DOI: 10.1021/acsnano.7b04523

Abstract: Here we report the formation of high capacity Li-ion battery anodes from Si1-xGex alloy nanowire arrays that are grown directly on stainless steel current collectors, in a single-step synthesis. The direct formation of these Si1-xGex… read more here.

Keywords: xgex nanowires; si1 xgex; battery anodes; ion battery ... See more keywords

Si1-xGex nanoantennas with a tailored Raman response and light-to-heat conversion for advanced sensing applications.

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Published in 2019 at "Nanoscale"

DOI: 10.1039/c9nr01837a

Abstract: Active light-emitting all-dielectric nanoantennas recently have demonstrated great potential as highly efficient nanoscale light sources owing to their strong luminescent and Raman responses. However, their large-scale fabrication faces a number of problems related to productivity… read more here.

Keywords: raman response; light; si1 xgex; xgex ... See more keywords
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Composition and strain analysis of Si1-xGex core fiber with Raman spectroscopy

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Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5034408

Abstract: The fabrication and characterization of Si1-xGex core fiber have attracted much attention because of its great application potential in new optoelectronic devices. In this work, by assembling two semi-cylindrical monocrystalline Si and Ge rods into… read more here.

Keywords: xgex core; si1 xgex; fiber; spectroscopy ... See more keywords
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On the alloying and strain effects of divacancy energy level in n-type Si1 − xGex

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Published in 2019 at "Journal of Applied Physics"

DOI: 10.1063/1.5126111

Abstract: Deep level transient spectroscopy was used to investigate point defects introduced by room temperature He-ion irradiation in both fully strained and partially relaxed phosphorous doped n-type Si1 − xGex films epitaxially grown on the Si (001) substrate… read more here.

Keywords: si1 xgex; level; spectroscopy; strain ... See more keywords

Toward accurate electronic, optical, and vibrational properties of hexagonal Si, Ge, and Si1−xGex alloys from first-principle simulations

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Published in 2021 at "Journal of Applied Physics"

DOI: 10.1063/5.0043773

Abstract: A new hexagonal phase of Si1−xGex alloys have been successfully synthesized through efforts in recent reports. Utilizing the combined first-principle calculations and special quasi-random model, we precisely investigated the structural, electronic, optical, and vibrational properties… read more here.

Keywords: first principle; si1 xgex; hexagonal si1; xgex alloys ... See more keywords
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Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant

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Published in 2022 at "Materials"

DOI: 10.3390/ma15196918

Abstract: We investigated the selective etching of Si versus Si1−xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si1−xGex with a higher Ge… read more here.

Keywords: versus si1; etching versus; selective etching; si1 xgex ... See more keywords
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Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

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Published in 2019 at "Beilstein Journal of Nanotechnology"

DOI: 10.3762/bjnano.10.182

Abstract: Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering… read more here.

Keywords: characterization si1; grown annealed; fabrication characterization; si1 xgex ... See more keywords