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Published in 2019 at "Indian Journal of Physics"
DOI: 10.1007/s12648-019-01485-9
Abstract: AbstractThis paper explores an analysis of low- and high-frequency noise in a heterojunction, selective buried oxide (SELBOX) with high-k gate dielectric TFET. The electrical parameters for different doping concentrations, δp+ layer width and mole fractions…
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Keywords:
spectral density;
selbox;
noise behaviour;
si1 xgex ... See more keywords
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Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150408
Abstract: Abstract Nanosecond pulsed laser annealing using a frequency doubled Nd:YAG laser (λ = 532 nm) was performed on undoped implant amorphized Si and 40 nm Si1-xGex epitaxial thin films ranging from x = 0.1 to 0.5. Ge+ implants were used to…
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Keywords:
amorphized si1;
implant amorphized;
thin films;
si1 xgex ... See more keywords
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Published in 2021 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2021.126128
Abstract: Abstract Homogeneous concentration Si1-XGeX crystals (0.3≤X≤0.9) with 20 mm in diameter were grown using the Travelling Liquidus Zone (TLZ) method. Infrared (IR) absorption spectra of the SiGe crystals were measured at room temperature, which revealed…
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Keywords:
xgex crystals;
interstitial oxygen;
si1;
si1 xgex ... See more keywords
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Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c16563
Abstract: We report a novel approach for engineering tensely strained Si layers on a relaxed silicon germanium on insulator (SGOI) film using a combination of condensation, annealing, and epitaxy in conditions specifically chosen from elastic simulations.…
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Keywords:
type mosfet;
engineering;
temperature;
strained layers ... See more keywords
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Published in 2017 at "ACS nano"
DOI: 10.1021/acsnano.7b04523
Abstract: Here we report the formation of high capacity Li-ion battery anodes from Si1-xGex alloy nanowire arrays that are grown directly on stainless steel current collectors, in a single-step synthesis. The direct formation of these Si1-xGex…
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Keywords:
xgex nanowires;
si1 xgex;
battery anodes;
ion battery ... See more keywords
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Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr01837a
Abstract: Active light-emitting all-dielectric nanoantennas recently have demonstrated great potential as highly efficient nanoscale light sources owing to their strong luminescent and Raman responses. However, their large-scale fabrication faces a number of problems related to productivity…
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Keywords:
raman response;
light;
si1 xgex;
xgex ... See more keywords
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Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5034408
Abstract: The fabrication and characterization of Si1-xGex core fiber have attracted much attention because of its great application potential in new optoelectronic devices. In this work, by assembling two semi-cylindrical monocrystalline Si and Ge rods into…
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Keywords:
xgex core;
si1 xgex;
fiber;
spectroscopy ... See more keywords
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Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5126111
Abstract: Deep level transient spectroscopy was used to investigate point defects introduced by room temperature He-ion irradiation in both fully strained and partially relaxed phosphorous doped n-type Si1 − xGex films epitaxially grown on the Si (001) substrate…
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Keywords:
si1 xgex;
level;
spectroscopy;
strain ... See more keywords
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Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0043773
Abstract: A new hexagonal phase of Si1−xGex alloys have been successfully synthesized through efforts in recent reports. Utilizing the combined first-principle calculations and special quasi-random model, we precisely investigated the structural, electronic, optical, and vibrational properties…
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Keywords:
first principle;
si1 xgex;
hexagonal si1;
xgex alloys ... See more keywords
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Published in 2022 at "Materials"
DOI: 10.3390/ma15196918
Abstract: We investigated the selective etching of Si versus Si1−xGex with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si1−xGex with a higher Ge…
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Keywords:
versus si1;
etching versus;
selective etching;
si1 xgex ... See more keywords
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Published in 2019 at "Beilstein Journal of Nanotechnology"
DOI: 10.3762/bjnano.10.182
Abstract: Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering…
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Keywords:
characterization si1;
grown annealed;
fabrication characterization;
si1 xgex ... See more keywords