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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4995812
Abstract: The crystal growth of single-crystalline Si1−xSnx layers with various Sn contents and analytical comparisons of their fundamental physical properties are strongly desired for next-generation group-IV electronics. In the present study, Si1−xSnx layers with varying Sn…
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Keywords:
oriented inp;
001 oriented;
lattice matched;
si1 xsnx ... See more keywords