Insight into the structure stability and bonding nature of HfB2(0001)/SiC(111) interface: A first-principles study
Sign Up to like & getrecommendations! Published in 2020 at "Ceramics International"
DOI: 10.1016/j.ceramint.2020.10.010
Abstract: Abstract The properties of HfB2(0001)/SiC(111) interface, including adhesion energy, interfacial energy and electronic structure, were performed based on density functional theory. Ten interface configurations with different terminations (Hf- and B- for HfB2(0001); Si- and C-… read more here.
Keywords: 0001 sic; structure; hfb2 0001; sic 111 ... See more keywords
Revealing the adhesion, stability and electronic structure of ZrC(111)/SiC(111) interface: A first-principles study
Sign Up to like & getrecommendations! Published in 2020 at "Vacuum"
DOI: 10.1016/j.vacuum.2020.109591
Abstract: Abstract The atomic structure and electronic properties of ZrC(111)/SiC(111) interfaces were investigated by first-principles calculations based on density functional theory. Considering three possible stacking sites and four possible terminations, twelve interfaces have been studied. Surface… read more here.
Keywords: 111 sic; zrc 111; sic 111; site ... See more keywords
Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4975630
Abstract: We report the synthesis of highly oriented diamond (HOD) (111) films on 3C-SiC/Si (111) substrates. Bias-enhanced nucleation (BEN) is a key process for the heteroepitaxial growth of HOD films. Conventional long nucleation periods have been… read more here.
Keywords: highly oriented; sic 111; diamond; 111 films ... See more keywords
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5019325
Abstract: The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in… read more here.
Keywords: thermal bowing; critical thermal; aspect ratio; sic 111 ... See more keywords
High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2018 at "Journal of the American Ceramic Society"
DOI: 10.1111/jace.15260
Abstract: 3C-SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C-SiC (111) polycrystalline films were prepared… read more here.
Keywords: laser chemical; sic 111; thick films; deposition ... See more keywords
Atomic and Electronic Structure of 3C-SiC(111)-($$2\sqrt 3 \times 2\sqrt 3 $$23×23 )-R30° Surface
Sign Up to like & getrecommendations! Published in 2018 at "Physics of the Solid State"
DOI: 10.1134/s1063783418100037
Abstract: AbstractThe theoretical studies and ab initio calculations have been carried out for the first time for atomic and electronic structure of four variants of 3C-SiC(111)-($$2\sqrt 3 \times 2\sqrt 3 $$23×23 )-R30° surface with Si- terminated… read more here.
Keywords: 111 sqrt; sic 111; electronic structure; surface ... See more keywords