Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices
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DOI: 10.35848/1882-0786/ac5ace
Abstract: The leakage current and flat-band voltage (V FB) instability of NO-nitrided SiC(11 2¯ 0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces… read more here.
Keywords: impact nitridation; sic 112; nitridation reliability; 112 mos ... See more keywords