Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties
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DOI: 10.2351/7.0001186
Abstract: Laser doping of n-type 4H-silicon carbide (SiC) semiconductor substrates with boron (B) using a pulsed Nd:YAG laser (λ = 1064 nm) is reported. An aqueous boric acid solution was used as a boron precursor. A simple theoretical heat… read more here.
Keywords: laser; doping type; boron; sic boron ... See more keywords