Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
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DOI: 10.3390/mi10100635
Abstract: Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To… read more here.
Keywords: sab; sic capacitive; pressure sensor; aln ... See more keywords