Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.7b10751
Abstract: Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power applications. An active SiC layer is usually fabricated using halide-assisted chemical vapor dep ... read more here.
Keywords: chemical vapor; growth mechanism; vapor deposition; vapor ... See more keywords
Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2019.2910077
Abstract: Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices. As a first-order approximation, growth-rate- and surface-normal-scaling functions were determined based on the reported experimental results. Simulated… read more here.
Keywords: vapor deposition; sic chemical; trench filling; chemical vapor ... See more keywords