Analysis of the Forward I–V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States
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DOI: 10.1007/s11664-017-5916-8
Abstract: In this paper, the impact of silicon carbide intrinsic defect states, such as Z1/2 and EH6/7 centers, on the forward current–voltage curves of aluminum (Al)-implanted 4H-SiC p-i-n diodes is investigated by means of a physics-based… read more here.
Keywords: defect states; analysis forward; characteristics implanted; sic diodes ... See more keywords
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode
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DOI: 10.1134/s1063782617030095
Abstract: Abstractp+–n0–n+ 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm2. It is shown that the… read more here.
Keywords: voltage; avalanche breakdown; current voltage; sic diodes ... See more keywords