Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films
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DOI: 10.1016/j.jcrysgro.2017.08.008
Abstract: Abstract Three types of unidentified stacking faults with emission wavelengths of over 500 nm were confirmed in 4H-SiC epitaxial films and characterized using grazing incident X-ray topography, transmission electron microscopy, and high-resolution scanning transmission electron microscopy.… read more here.
Keywords: sic epitaxial; microscopy; stacking faults; wavelengths 500 ... See more keywords
Reduction of morphological defects in 4H-SiC epitaxial layers
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DOI: 10.1016/j.jcrysgro.2018.10.023
Abstract: Abstract Correlation between morphological defects and device yield in the 4H-SiC epitaxial layers were investigated with overlapped morphological defect mapping and device yield mapping figures. The results show the harmful level of various morphological defects… read more here.
Keywords: triangular defects; sic epitaxial; epitaxial layers; morphological defects ... See more keywords