Oxygen-related defects in 4H-SiC from first principles
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ad45ae
Abstract: We investigated the abundance, structures, energy levels, and spin states of oxygen-related defects in 4H-SiC on the basis of first-principles calculations. We applied a hybrid functional in the overall calculations, which gives reliable defect properties,… read more here.
Keywords: defects sic; sic first; oxygen related; first principles ... See more keywords