Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures
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DOI: 10.1088/1361-6641/aa8b2a
Abstract: Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice… read more here.
Keywords: optical properties; grown silicon; heteroepitaxially grown; low temperatures ... See more keywords