Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.05.263
Abstract: Abstract In this manuscript, an ultralow dark current solar-blind photodetector based on β-Ga2O3/4H-SiC heterojunction is generated by depositing β-Ga2O3 thin film on n-type 4H-SiC substrates using Pulse Laser Deposition method. It is found that the… read more here.
Keywords: ga2o3 sic; annealing temperature; sic heterojunction; heterojunction ... See more keywords
Si/SiC heterojunction prepared by metal induced crystallization of amorphous silicon
Sign Up to like & getrecommendations! Published in 2017 at "Materials Letters"
DOI: 10.1016/j.matlet.2016.11.079
Abstract: Abstract In this work, amorphous Si films were prepared on 6H-SiC(0001) by PECVD and induced to be crystalline structure at 400 °C~700 °C by Ni to form c-Si/6H-SiC heterojunction. Raman and XRD results indicated that ɑ-Si films… read more here.
Keywords: crystallization; prepared metal; metal induced; heterojunction prepared ... See more keywords
Spatially resolved Fourier transform impedance spectroscopy: A technique to rapidly characterize interfaces, applied to a QD/SiC heterojunction
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0046439
Abstract: We demonstrate a technique to quickly build and spatially map the frequency response of optoelectronic devices. The transfer function of a linear system is the Fourier transform of its impulse response. Such an impulse response… read more here.
Keywords: impedance spectroscopy; transform impedance; spectroscopy; fourier transform ... See more keywords
A Novel Low On−State Resistance Si/4H−SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero−Transfer Mechanism
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13050778
Abstract: In this study, we propose a novel silicon (Si)/silicon carbide (4H−SiC) heterojunction vertical double−diffused MOSFET with an electron tunneling layer (ETL) (HT−VDMOS), which improves the specific on−state resistance (RON), and examine the hetero−transfer mechanism by… read more here.
Keywords: vdmos; electron tunneling; resistance; sic heterojunction ... See more keywords