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Published in 2018 at "Technical Physics Letters"
DOI: 10.1134/s1063785018030197
Abstract: Irradiation of crystalline n-type silicon carbide (n-SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating (i-SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i-SiC layers has been…
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Keywords:
sic high;
heat treatment;
high energy;
sic layers ... See more keywords