A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications
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DOI: 10.1109/tpel.2020.3005940
Abstract: Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by… read more here.
Keywords: sic igbt; igbt; models fabrications; review sic ... See more keywords