Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing
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DOI: 10.1088/1674-4926/23090024
Abstract: Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 MeV electron irradiation with doses… read more here.
Keywords: sic induced; irradiation; type sic; defects evolution ... See more keywords