Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
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DOI: 10.7567/apex.10.036601
Abstract: We study the correlation between crystal quality and electrical transport in 4H-SiC by micro-photoluminescence and laser-beam-induced photocurrent measurements. A focused HeCd laser at 325 nm has been employed to simultaneously measure, with a spatial resolution… read more here.
Keywords: investigated photoinduced; extended defects; defects sic; sic investigated ... See more keywords