Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3102614
Abstract: Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of… read more here.
Keywords: near interface; integrated charge; method; mos capacitors ... See more keywords
Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3011661
Abstract: The low channel-carrier mobility in commercial SiC MOSFETs has been attributed to fast electron traps labeled “NI.” These traps exhibit anomalous behavior compared to other interface trap signals. Furthermore, the electrical parameters extracted from a… read more here.
Keywords: interface trap; mos capacitors; interface; conductance ... See more keywords