Novel driver circuit for switching performance improvements in SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Power Electronics"
DOI: 10.1007/s43236-020-00132-5
Abstract: Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are expected to be an attractive replacement for Si MOSFETs in high power applications due to their high blocking voltage, high switching speed, and low switching losses. However,… read more here.
Keywords: voltage; voltage current; sic mosfet; oscillation ... See more keywords
Investigation on 4H SiC MOSFET with three-section edge termination
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.10.018
Abstract: Abstract SiC MOSFET with three-section edge termination is investigated in this paper. The edge termination for SiC MOSFET is divided into three sections with different field limited rings and the space between rings, which benefits… read more here.
Keywords: sic mosfet; mosfet three; edge termination;
Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductance in the Converter Layout
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/ecce.2016.7854819
Abstract: 1200 V SiC mosfet is a suitable replacement for Si insulated gate bipolar transistors due to its improved switching behavior. However, high $di/dt$ and $dv/dt$ of SiC mosfet cause very high voltage overshoot and oscillations due… read more here.
Keywords: sic mosfet; tex math; inline formula;
Assist Gate Driver Circuit on Crosstalk Suppression for SiC MOSFET Bridge Configuration
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2019.2914180
Abstract: Crosstalk in a phase-leg configuration significantly limits the high switching speed performance of silicon carbide (SiC) MOSFET due to their lower threshold voltage and higher allowable negative gate voltage as compared with the traditional silicon… read more here.
Keywords: circuit; gate driver; crosstalk; sic mosfet ... See more keywords
High-Density Current-Transformer-Based Gate-Drive Power Supply With Reinforced Isolation for 10-kV SiC MOSFET Modules
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2019.2943742
Abstract: With features such as faster switching frequency and higher breakdown voltage, wide bandgap power devices are key enablers to address the increasing demand for higher power density and higher efficiency in future medium-voltage converters. The… read more here.
Keywords: voltage; sic mosfet; density; power ... See more keywords
Prediction of Electromagnetic Interference Noise in SiC MOSFET Module
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2019.2908971
Abstract: Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) are new generation of power semiconductor devices with higher slew rates. During switching transient process, undesirable switching oscillations occurs in SiC MOSFET modules due to… read more here.
Keywords: noise sic; interference noise; electromagnetic interference; prediction electromagnetic ... See more keywords
Numerical Simulation Study of a Low Breakdown Voltage 4H-SiC MOSFET for Photovoltaic Module-Level Applications
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2848664
Abstract: Silicon carbide (SiC) power MOSFETs are available only for high-power and medium-to-high-voltage applications, generally above 600 V, because for lower blocking voltages, they comparatively provide lower advantages in terms of efficiency. There are applications, however,… read more here.
Keywords: voltage; sic mosfet; breakdown voltage; power ... See more keywords
Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2937059
Abstract: Under certain conditions, self-sustained oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the… read more here.
Keywords: body diode; mosfet body; oscillation; self sustained ... See more keywords
A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3263150
Abstract: SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by… read more here.
Keywords: thermal cycling; inductance; sic mosfet; mosfet ... See more keywords
Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/tia.2019.2934713
Abstract: In this article, a detailed hard switching behavior comparison between a 1700-V silicon carbide metal-oxide-semiconductor field-effect-transistor and a 1700-V silicon insulated-gate bipolar-transistor module was performed in an identical low inductance commutation circuit for comparable driving… read more here.
Keywords: mosfet igbt; comparison 1700; modules identical; 1700 sic ... See more keywords
LVDC SiC MOSFET Analog Electronic Fuse With Self-Adjusting Tripping Time Depending on Overcurrent Condition
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3104606
Abstract: This article deals with the design of an electronic fuse for 380 V dc distribution systems. It has been devised for applications that require current limitation up to 3 A, so approximately 1.2 kW. To… read more here.
Keywords: time; sic mosfet; circuit; current limitation ... See more keywords