Comprehensive comparison between silicon carbide MOSFETs and silicon IGBTs based traction systems for electric vehicles
Sign Up to like & getrecommendations! Published in 2017 at "Applied Energy"
DOI: 10.1016/j.apenergy.2016.05.059
Abstract: Abstract In this paper, the performance of both silicon carbide (SiC) MOSFETs and silicon (Si) IGBTs based electric vehicle (EV) traction systems are investigated and compared comprehensively, particularly from the efficiency point of view. Both… read more here.
Keywords: silicon carbide; silicon igbts; mosfets silicon; igbts based ... See more keywords
A high-accuracy switching loss model of SiC MOSFETs in a motor drive for electric vehicles
Sign Up to like & getrecommendations! Published in 2021 at "Applied Energy"
DOI: 10.1016/j.apenergy.2021.116827
Abstract: Abstract Power loss estimation of power electronic devices is essential to the efficiency optimization of motor drives in electric vehicles. However, most existing power loss models of silicon carbide (SiC) metal-oxidesemiconductor field-effect transistors (MOSFETs) have… read more here.
Keywords: loss; sic mosfets; model; power loss ... See more keywords
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.01.016
Abstract: Abstract In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper… read more here.
Keywords: mobility; boron; treatment; sic mosfets ... See more keywords
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "Scientific Reports"
DOI: 10.1038/s41598-022-08014-5
Abstract: Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work,… read more here.
Keywords: density; performance; near interface; interface traps ... See more keywords
R DS(on) vs. inductance: comparison of SiC MOSFETs in 7pin D2Pak and 4pin TO‐247 and their benefits for high‐power MHz inverters
Sign Up to like & getrecommendations! Published in 2019 at "IET Power Electronics"
DOI: 10.1049/iet-pel.2018.5838
Abstract: In this work, the authors present their investigations of the benefits of combining the latest silicon carbide MOSFETs with novel packages for electronic ballasts of inductively coupled plasmas. Such plasmas require MHz inverters with output… read more here.
Keywords: 4pin 247; sic mosfets; power; 7pin d2pak ... See more keywords
Switching Investigation of SiC MOSFET Based 4-Quadrant Switch
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Access"
DOI: 10.1109/access.2022.3232416
Abstract: SiC MOSFETs are suited for several power electronic converters as they reduce loss, increase efficiency, withstand high temperatures and switch faster. SiC MOSFETs are 2-quadrant switches as they can block voltage of only one polarity.… read more here.
Keywords: turn time; switch; sic mosfets; quadrant switches ... See more keywords
Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Access"
DOI: 10.1109/access.2023.3245817
Abstract: After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based… read more here.
Keywords: mosfets anpc; peak voltage; anpc commutation; modulation ... See more keywords
An Active Voltage Balancing Control Based on Adjusting Driving Signal Time Delay for Series-Connected SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2019.2944164
Abstract: Limited by low availability, high price, and poor switching performance of high-voltage power devices, connecting low-voltage devices in series to block much higher voltages is always an option. However, severe voltage unbalance during turn-off transient… read more here.
Keywords: voltage; time delay; sic mosfets; series connected ... See more keywords
Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2953235
Abstract: The unique gate failure mode of SiC MOSFETs is often identified but has not been fully understood yet. In this letter, post-failure cell inspections demonstrate that its main cause is the crack at the SiO2… read more here.
Keywords: physics; sic mosfets; failure; failure physics ... See more keywords
Active Thermal Management for SiC MOSFETs Based on Equivalent Adjustment of Buffer Capacitor
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2021.3135273
Abstract: Junction temperature fluctuations are the most important factor in accelerating the aging and failure of SiC MOSFETs. An effective way to improve the reliability of SiC MOSFETs is to suppress or even smooth out the… read more here.
Keywords: active thermal; thermal management; sic mosfets; buffer ... See more keywords
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2938262
Abstract: An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to Si power MOSFETs. Measurement techniques for the characterization of… read more here.
Keywords: threshold voltage; voltage; sic mosfets; mosfets high ... See more keywords