Analysis and Modeling of SiC MPS Diode and Its Parasitic Oscillation
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DOI: 10.1109/jestpe.2019.2952875
Abstract: SiC merged p-i-n Schottky (MPS) diodes have great potential in the construction of multiple power electronic circuits for their excellent static and dynamic characteristics. The ultrafast switching speed is unfortunately accompanied by undesirable parasitic oscillations,… read more here.
Keywords: modeling sic; sic mps; analysis modeling; model ... See more keywords