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Published in 2018 at "Applied optics"
DOI: 10.1364/ao.57.008431
Abstract: This work examines the electrical and radiometric characteristics of a photodiode based on a 4H-SiC semiconductor material with a semitransparent Cr Schottky barrier of about 7 nm thickness. The device had a photosensitive area 10…
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Keywords:
photodetector spectral;
range;
optical properties;
properties sic ... See more keywords