Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Sign Up to like & getrecommendations! Published in 2019 at "Micromachines"
DOI: 10.3390/mi10100629
Abstract: In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy… read more here.
Keywords: epitaxial layer; sic piezoresistors; cantilever beam; type ... See more keywords