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Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107770
Abstract: Abstract We propose a calculation model of current density that causes forward bias degradation from substrate basal plane dislocations (BPDs) in 4H-SiC PiN diodes. The hole concentration above which substrate BPDs expand to single Shockley…
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Keywords:
sic pin;
forward bias;
bias degradation;
pin diodes ... See more keywords
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Published in 2019 at "Materials"
DOI: 10.3390/ma12244186
Abstract: In this paper, a 13.4 kV/55 A 4H-silicon carbide (SiC) PiN diode with a better trade-off between blocking voltage, differential on-resistance, and technological process complexity has been successfully developed. A multiple zone gradient modulation field…
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Keywords:
blocking voltage;
sic pin;
differential resistance;
pin ... See more keywords