High-temperature electro-ceramics and their application to SiC power modules
Sign Up to like & getrecommendations! Published in 2018 at "Ceramics International"
DOI: 10.1016/j.ceramint.2017.11.140
Abstract: Abstract This paper presents the research achievement in Japan to develop highly-refractive electro-ceramics for application to silicon carbide (SiC) power modules such as heat-resistive passive components (snubber capacitors and resistors), metalised substrates, ceramic circuit boards,… read more here.
Keywords: temperature; power modules; electro ceramics; sic power ... See more keywords
Interference source analysis and EMC design for All-SiC power module in EV charger
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113458
Abstract: Abstract Silicon carbide (SiC) power devices suitable for high-frequency, high-power density and high-temperature applications, and thus gain a broad prospect in the electric vehicle (EV) charger area. However, the high-frequency switching of SiC devices under… read more here.
Keywords: power module; charger; power; emc ... See more keywords
Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113943
Abstract: Abstract This paper proposes the detailed analysis of the short-circuit failure mechanism of a particular class of silicon carbide (SiC) power MOSFETs, exhibiting a safe fail-to-open-circuit type signature. The results are based on extensive experimental… read more here.
Keywords: short circuit; circuit; circuit failure; power mosfets ... See more keywords
Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2020.2971623
Abstract: Silicon carbide (SiC) power devices possess many beneficial properties for power electronics applications, but commercial 62-mm SiC power module packages with the direct drop-in replacement of Si devices limit many benefits of these SiC power… read more here.
Keywords: power module; low profile; module; power ... See more keywords
Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2021.3136746
Abstract: To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore, presents an overview of related research methods aiming to meet that… read more here.
Keywords: short circuit; circuit robustness; power; reliability ... See more keywords
A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2017.2703910
Abstract: The reduced chip size and unipolar current conduction mechanism make silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) suitable for high-frequency power electronics applications. Modeling the switching process of the SiC power MOSFET with parasitic components… read more here.
Keywords: high frequency; suitable high; power; power mosfet ... See more keywords
Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3068196
Abstract: Both experiments and simulations have shown that single-event burnout (SEB), a catastrophic event, occurs at less than half of the rated blocking voltage in commercial 4H-SiC power devices under a heavy-ion strike. The failure was… read more here.
Keywords: power mosfet; mesoplasma formation; failure; ion ... See more keywords
Adaptive Multi-Level Active Gate Drivers for SiC Power Devices
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2019.2922112
Abstract: State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower losses. High switching speed is preferred for achieving low switching loss, yet high dv/dt and di/dt… read more here.
Keywords: power devices; level active; power; gate ... See more keywords
A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3010154
Abstract: Silicon carbide (SiC) power MOSFETs have been commercialized to replace silicon insulated gate bipolar transistors (IGBTs) in power conversion applications. However, the short-circuit ruggedness of SiC power MOSFETs must be enhanced to match that of… read more here.
Keywords: power mosfets; power; short circuit; sic power ... See more keywords
Active Power Cycling Test Bench for SiC Power MOSFETs—Principles, Design, and Implementation
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3018535
Abstract: One way to achieve the best in class reliability is the implementation of a design for reliability methodology into the design process in order to estimate the lifetime of each individual critical component, based on… read more here.
Keywords: methodology; power cycling; active power; power ... See more keywords
Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2021.3106316
Abstract: Double-sided cooling based on planar packaging method features better thermal performance than traditional single-sided cooling based on wire bonds. However, this method still faces thermal and electrical challenges in multichip SiC power modules. Specifically, one… read more here.
Keywords: power; planar packaging; packaging; sic power ... See more keywords