LAUSR

About LAUSR
Donate
Contact Us

Follow us:

You are not signed in:

Sign Up!


   Articles with "sic power" as a keyword



High-temperature electro-ceramics and their application to SiC power modules

Sign Up to like & get
recommendations! Published in 2018 at "Ceramics International"

DOI: 10.1016/j.ceramint.2017.11.140

Abstract: Abstract This paper presents the research achievement in Japan to develop highly-refractive electro-ceramics for application to silicon carbide (SiC) power modules such as heat-resistive passive components (snubber capacitors and resistors), metalised substrates, ceramic circuit boards,… read more here.

Keywords: temperature; power modules; electro ceramics; sic power ... See more keywords

Interference source analysis and EMC design for All-SiC power module in EV charger

Sign Up to like & get
recommendations! Published in 2019 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2019.113458

Abstract: Abstract Silicon carbide (SiC) power devices suitable for high-frequency, high-power density and high-temperature applications, and thus gain a broad prospect in the electric vehicle (EV) charger area. However, the high-frequency switching of SiC devices under… read more here.

Keywords: power module; charger; power; emc ... See more keywords
Photo from wikipedia

Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode

Sign Up to like & get
recommendations! Published in 2020 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2020.113943

Abstract: Abstract This paper proposes the detailed analysis of the short-circuit failure mechanism of a particular class of silicon carbide (SiC) power MOSFETs, exhibiting a safe fail-to-open-circuit type signature. The results are based on extensive experimental… read more here.

Keywords: short circuit; circuit; circuit failure; power mosfets ... See more keywords
Photo from wikipedia

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

Sign Up to like & get
recommendations! Published in 2021 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"

DOI: 10.1109/jestpe.2020.2971623

Abstract: Silicon carbide (SiC) power devices possess many beneficial properties for power electronics applications, but commercial 62-mm SiC power module packages with the direct drop-in replacement of Si devices limit many benefits of these SiC power… read more here.

Keywords: power module; low profile; module; power ... See more keywords

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Sign Up to like & get
recommendations! Published in 2022 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"

DOI: 10.1109/jestpe.2021.3136746

Abstract: To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore, presents an overview of related research methods aiming to meet that… read more here.

Keywords: short circuit; circuit robustness; power; reliability ... See more keywords

A Review of Partial Discharge in Medium Voltage SiC Power Modules Under Square Wave Excitation: Characterization, Mitigation, and Detection

Sign Up to like & get
recommendations! Published in 2024 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"

DOI: 10.1109/jestpe.2024.3408449

Abstract: The medium voltage (MV) silicon carbide (SiC) power modules hold significant promise as a route for the solid-state converters to achieve higher power density, higher switching frequency, and lower loss. However, the emergence of partial… read more here.

Keywords: sic power; power modules; square wave; power ... See more keywords

Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests

Sign Up to like & get
recommendations! Published in 2024 at "IEEE Transactions on Device and Materials Reliability"

DOI: 10.1109/tdmr.2024.3379498

Abstract: The SiC die has broad application prospects in new energy vehicles due to its excellent performances. In recent years, with the continuous development, the safety and reliability of SiC power modules have become particularly important… read more here.

Keywords: failure sic; sic power; power modules; abnormal failure ... See more keywords

A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications

Sign Up to like & get
recommendations! Published in 2017 at "IEEE Transactions on Industrial Electronics"

DOI: 10.1109/tie.2017.2703910

Abstract: The reduced chip size and unipolar current conduction mechanism make silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) suitable for high-frequency power electronics applications. Modeling the switching process of the SiC power MOSFET with parasitic components… read more here.

Keywords: high frequency; suitable high; power; power mosfet ... See more keywords

Switching Energy Losses Characterization of Discrete SiC Power Transistors—A New Thermal Approach

Sign Up to like & get
recommendations! Published in 2025 at "IEEE Transactions on Instrumentation and Measurement"

DOI: 10.1109/tim.2025.3555731

Abstract: This article presents a new method for measuring the switching energies of discrete silicon carbide (SiC) power transistors based on an increase in junction temperature caused by the self-heating effect. The proposed method is introduced… read more here.

Keywords: power transistors; method; switching energy; sic power ... See more keywords

Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices

Sign Up to like & get
recommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2021.3068196

Abstract: Both experiments and simulations have shown that single-event burnout (SEB), a catastrophic event, occurs at less than half of the rated blocking voltage in commercial 4H-SiC power devices under a heavy-ion strike. The failure was… read more here.

Keywords: power mosfet; mesoplasma formation; failure; ion ... See more keywords
Photo by dewesoft from unsplash

Adaptive Multi-Level Active Gate Drivers for SiC Power Devices

Sign Up to like & get
recommendations! Published in 2020 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2019.2922112

Abstract: State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower losses. High switching speed is preferred for achieving low switching loss, yet high dv/dt and di/dt… read more here.

Keywords: power devices; level active; power; gate ... See more keywords