A 26‐GHz Low Noise Amplifier With 1.6‐dB Minimum Noise Figure in 0.15‐μm GaN‐on‐SiC Process
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DOI: 10.1002/mop.70038
Abstract: A 24.8–29.1‐GHz four‐stage gallium nitride (GaN) low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is presented in this letter which is fabricated in a 0.15‐μm GaN‐on‐SiC process. The proposed GaN LNA utilizes gate/drain bypass… read more here.
Keywords: noise figure; gan sic; sic process; low noise ... See more keywords