Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0005061
Abstract: p-doped 4H-SiC substrates were implanted with 57Fe ions at energies ranging from 30 to 160 keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100 nm-thick region in… read more here.
Keywords: properties implanted; semiconductor; magnetic properties; origin magnetic ... See more keywords
Transport Characteristics of Interfacial Charge in SiC Semiconductor–Epoxy Resin Packaging Materials
Sign Up to like & getrecommendations! Published in 2022 at "Frontiers in Chemistry"
DOI: 10.3389/fchem.2022.879438
Abstract: The silicon carbide (SiC) wide bandgap (WBG) semiconductor power device has been widely applied for its excellent properties. However, the charge accumulated in the interface of SiC semiconductor-related insulation packaging may lead to serious material… read more here.
Keywords: sic semiconductor; charge; epoxy resin; packaging ... See more keywords