Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104814
Abstract: Abstract SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing… read more here.
Keywords: polishing; single crystal; crystal substrate; mechanical polishing ... See more keywords
Numerical analysis of the dislocation density in the n-type 4H-SiC
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DOI: 10.1039/d3ce00219e
Abstract: A 4H-SiC single crystal is a substrate material for high-frequency and high-voltage power devices. Dislocation density is a fundamental criterion for evaluating the quality of 4H-SiC single crystals. 4H-SiC single... read more here.
Keywords: dislocation density; numerical analysis; sic single; dislocation ... See more keywords
Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales
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DOI: 10.3390/app10175944
Abstract: In this paper, a series of indentation tests in which the maximum normal force ranged from 0.4 to 3.3 N were carried out to determine the fracture toughness of 4H-SiC single crystals. The results indicated… read more here.
Keywords: single crystal; indentation; single crystals; study damage ... See more keywords