Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202400978
Abstract: Although GaN has successfully epitaxy growth on 4H‐SiC substrate, its kinetics mechanism, and how to control the morphology and polarity of epitaxial GaN have not been revealed yet. Herein, by investigating the epitaxial process of… read more here.
Keywords: growth sic; sic substrate; growth; kinetics mechanism ... See more keywords
Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-018-3903-5
Abstract: This paper aims to characterize two high electron mobility transistors analyzed with sapphire and 4H-SiC substrate. Comparison of the two structures are carried out in terms of threshold voltage (Vt), maximum drain current (ID), transconductance… read more here.
Keywords: sic substrate; sapphire; sapphire sic; high electron ... See more keywords
Role of SiC substrate surface on local tarnishing of deposited silver mirror stacks
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DOI: 10.1016/j.apsusc.2017.12.170
Abstract: Abstract The role of the SiC substrate surface on the resistance to the local initiation of tarnishing of thin-layered silver stacks for demanding space mirror applications was studied by combined surface and interface analysis on… read more here.
Keywords: substrate surface; sic substrate; layer; surface ... See more keywords
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.11.008
Abstract: Abstract AlGaN/GaN heterostructures were grown on “on-axis” and 2° off (0001) 4H-SiC substrates by metalorganic vapor phase epitaxy (MOVPE). Structural characterization was performed by transmission electron microscopy. The dislocation density, being greater in the on-axis… read more here.
Keywords: algan gan; sic substrate; axis case; gan heterostructures ... See more keywords
Substrate mediated properties of gold monolayers on SiC
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DOI: 10.1039/d2ra06548g
Abstract: In light of their unique physicochemical properties two-dimensional metals are of interest in the development of next-generation sustainable sensing and catalytic applications. Here we showcase results of the investigation of the substrate effect on the… read more here.
Keywords: graphene; sic substrate; catalytic activity; substrate supported ... See more keywords
Modeling of Electron Transfer in Graphene on SiC Substrate
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Nanoscience"
DOI: 10.1142/s0219581x19400933
Abstract: The results of simulation of electron transfer processes in a single graphene layer on a SiC substrate are presented. High mobility of charge carriers with respect to all known materials makes graphene to be a… read more here.
Keywords: sic substrate; graphene; electron transfer; electron ... See more keywords
Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Nanomaterials"
DOI: 10.1155/2019/5231983
Abstract: In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950… read more here.
Keywords: contact mechanism; faced sic; sic substrate; ohmic contact ... See more keywords