Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
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DOI: 10.1134/s1063782617020257
Abstract: The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism… read more here.
Keywords: non effects; switch current; gate switch; impact non ... See more keywords