Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2019.03.027
Abstract: Abstract The effective mobility in 4H-SiC trench metal-oxidesemiconductor field-effect transistors (MOSFETs) with an n-channel region on the 1 1 - 00 face, corresponding to the trench sidewalls, is investigated. Using a previously proposed mobility model,… read more here.
Keywords: mobility; effective mobility; scattering mobility; mobility sic ... See more keywords
SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2767904
Abstract: A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the integrated TLP-SBD that remarkably improves body diode… read more here.
Keywords: protection; schottky barrier; sic trench; level protection ... See more keywords
NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2941723
Abstract: As the gate oxide (GOX)-SiC interface of SiC MOSFETs is crucial for device performance, it requires special attention. To improve interface quality, device performance, and reliability, commonly, a postoxidation anneal (POA) is applied. Different gas… read more here.
Keywords: performance; device performance; sic trench; performance reliability ... See more keywords
Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15020598
Abstract: In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs with different gate structures has been investigated. The MOSFETs exhibited different failure modes under different DC bus voltages. For double trench… read more here.
Keywords: sic trench; trench mosfets; failure; short circuit ... See more keywords