Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes
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DOI: 10.1016/j.jcrysgro.2020.125809
Abstract: Abstract 4H-SiC trenches with depths of approximately 25 μm were filled under a special condition called the quasi-selective epitaxial growth mode that showed a refill-rate of 2.1 μm/h within 12 h, using a hot-wall chemical vapor deposition (CVD)… read more here.
Keywords: partial pressures; sic trenches; chemical vapor; source ... See more keywords