Grain-boundary type and distribution in silicon carbide coatings and wafers
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Nuclear Materials"
DOI: 10.1016/j.jnucmat.2017.12.016
Abstract: Abstract Silicon carbide is the main diffusion barrier against metallic fission products in TRISO (tristructural isotropic) coated fuel particles. The explanation of the accelerated diffusion of silver through SiC has remained a challenge for more… read more here.
Keywords: sic wafers; silicon carbide; grain boundary; triso particles ... See more keywords
Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13060869
Abstract: 4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a… read more here.
Keywords: sic wafers; material removal; nonaqueous slurry; polishing sic ... See more keywords
Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13071011
Abstract: With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade… read more here.
Keywords: sic wafers; stealth dicing; layered stealth; ultrafast lasers ... See more keywords