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   Articles with "sicl4" as a keyword



Siemens Reloaded: Chloride-Assisted Selective Hydrodechlorination of SiCl4 to HSiCl3.

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recommendations! Published in 2022 at "ChemSusChem"

DOI: 10.1002/cssc.202201953

Abstract: Trichlorosilane is the key intermediate for the large-scale production of polycrystalline silicon in the Siemens and Union Carbide processes. Both processes, however, are highly inefficient, and over two thirds of the trichlorosilane employed is converted… read more here.

Keywords: reloaded chloride; sicl4 hsicl3; chloride assisted; siemens reloaded ... See more keywords

Cu-Si bond and Cl defect synergistical catalysis for SiCl4 dissociation on CuCl2(1 0 0): A DFT study

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recommendations! Published in 2021 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2020.148777

Abstract: Abstract It is essential to convert SiCl4 into SiHCl3 over effective catalysts so as to construct a close-cycle sustainable polysilicon production process. However, the dissociation mechanism of SiCl4 is elusive yet. Here we adopted density… read more here.

Keywords: dft; dissociation; bond defect; sicl4 ... See more keywords

Effect of consecutive SiCl4 and hydrophobic molecule modification of cotton cloth for fresh oils and used oils removal

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recommendations! Published in 2019 at "Journal of Environmental Chemical Engineering"

DOI: 10.1016/j.jece.2019.103120

Abstract: Abstract The aim of this study was to enhance the hydrophobicity of cotton cloth using silicon tetrachloride (SiCl4) combined with water-repellent agents 1H,1H,2H,2H-perfluorooctyltriethoxysilane (POTS), dimethyldichlorosilane (DMDCS), and stearic acid (SA) for cooking oil and motor… read more here.

Keywords: water repellent; sicl4; cotton; cotton cloth ... See more keywords

Passivating and low damaging plasma etching of GaN using Cl2 and SiCl4 for recessed gate MOSc-HEMT devices

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recommendations! Published in 2024 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ad8303

Abstract: Plasma etching steps are critical for metal–oxide–semiconductor channel high electron mobility transistors gate fabrication as they can deteriorate electrical performances due to gallium nitride degradation. Adding SiCl4 to a low bias Cl2 plasma in presence… read more here.

Keywords: damaging plasma; plasma; sicl4; low damaging ... See more keywords